VN2222LL
Preferred Device
Small Signal MOSFET150 mAmps, 60 Volts
N–Channel TO–92
MAXIMUM RATINGSRatingDrain–Source VoltageDrain–Gate Voltage (RGS = 1.0 MΩ)Gate–Source Voltage– Continuous– Non–repetitive (tp ≤ 50 µs)Drain Current– Continuous– PulsedTotal Power Dissipation @ TA = 25°CDerate above 25°COperating and StorageTemperature RangeSymbolVDSSVDGRVGSVGSMIDIDMPDTJ, TstgValue6060±20±4015010004003.2–55 to+150mWmW/°C°CSGUnitVdcVdcVdcVpkmAdchttp://onsemi.com
150 mAMPS60 VOLTSRDS(on) = 7.5 ΩN–ChannelDTHERMAL CHARACTERISTICS
CharacteristicThermal Resistance, Junction to AmbientMaximum Lead Temperature forSoldering Purposes, 1/16″ from casefor 10 secondsSymbolRθJATLMax312.5300Unit°C/W°C12TO–92CASE 29Style 22
3MARKING DIAGRAM& PIN ASSIGNMENT
VN2222LLYWW
1Source
2Gate
YWW
3Drain
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the packagedimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future useand best overall value.
© Semiconductor Components Industries, LLC, 20001
November, 2000 – Rev. 2
Publication Order Number:
VN2222LL/D
VN2222LL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICS
Drain–Source Breakdown Voltage(VGS = 0, ID = 100 µAdc)Zero Gate Voltage Drain Current(VDS = 48 Vdc, VGS = 0)(VDS = 48 Vdc, VGS = 0, TJ = 125°C)Gate–Body Leakage Current, Forward(VGSF = 30 Vdc, VDS = 0)V(BR)DSSIDSS60–VdcµAdc–––10500–100nAdcIGSSFON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage(VDS = VGS, ID = 1.0 mAdc)Static Drain–Source On–Resistance(VGS = 10 Vdc, ID = 0.5 Adc)(VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125°C)Drain–Source On–Voltage(VGS = 5.0 Vdc, ID = 200 mAdc)(VGS = 10 Vdc, ID = 500 mAdc)On–State Drain Current(VGS = 10 Vdc, VDS ≥ 2.0 VDS(on))Forward Transconductance(VDS = 10 Vdc, ID = 500 mAdc)VGS(th)rDS(on)0.62.5VdcΩ––––7501007.513.5Vdc1.53.75––mAµmhosVDS(on)ID(on)gfsDYNAMIC CHARACTERISTICS
Input CapacitanceOutput CapacitanceReverse Transfer Capacitance(VDS = 25 Vdc, V25VdVGS = 0,0f = 1.0 MHz)CissCossCrss–––60255.0pFSWITCHING CHARACTERISTICS (Note 1.)
Turn–On Delay TimeTurn–Off Delay Time(VDD = 15 Vdc, I 15 Vdc, ID = 600 mA, 600 mA,Rgen = 25 Ω, RL = 23 Ω)tontoff––1010ns1.Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.http://onsemi.com
2
VN2222LL
21.8ID, DRAIN CURRENT (AMPS)1.61.41.210.80.60.40.201234567TA = 25°CID, DRAIN CURRENT (AMPS)VGS = 10 V9 V8 V7 V6 V5 V4 V3 V100123456710VDS, DRAIN-āSOURCE VOLTAGE (VOLTS)
VGS, GATEā-SOURCE VOLTAGE (VOLTS)
0.80.60.40.2VDS = 10 V-ā55°C125°C125°CFigure 1. Ohmic Region
rDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE(NORMALIZED)VGS(th), THRESHOLD VOLTAGE (NORMALIZED)Figure 2. Transfer Characteristics
2.42.221.81.61.41.210.80.60.4-60-20+20+60T, TEMPERATURE (°C)
+100+140VGS = 10 VID = 200 mA1.21.151.11.0510.950.90.850.80.750.7-60-200+20+60T, TEMPERATURE (°C)
+100+140VDS = VGSID = 1 mAFigure 3. Temperature versus StaticDrain–Source On–ResistanceFigure 4. Temperature versus Gate
Threshold Voltage
ORDERING INFORMATION
DeviceVN2222LLVN2222LLRLVN2222RLRAVN2222RLRMPackageTO–92TO–92TO–92TO–92Shipping1000 Unit/Box2000 Tape & Reel2000 Tape & Reel1000 Unit/Boxhttp://onsemi.com
3
VN2222LL
PACKAGE DIMENSIONS
TO–92CASE 29–11ISSUE AL
ARPLSEATINGPLANEBNOTES:
1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.CONTOUR OF PACKAGE BEYOND DIMENSION RIS UNCONTROLLED.
4.LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K MINIMUM.
INCHESMINMAX0.1750.2050.1700.2100.1250.1650.0160.0210.0450.0550.0950.1050.0150.0200.500---0.250---0.0800.105---0.1000.115---0.135---MILLIMETERSMINMAX4.455.204.325.333.184.190.4070.5331.151.392.422.660.390.5012.70---6.35---2.042.66---2.542.93---3.43---KXXHV1DGJCNNSECTION X–XDIMABCDGHJKLNPRVSTYLE 22:
PIN 1.SOURCE
2.GATE3.DRAIN
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changeswithout further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particularpurpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must bevalidated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury ordeath may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and holdSCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonableattorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claimalleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
CENTRAL/SOUTH AMERICA:
Spanish Phone:303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email:ONlit–spanish@hibbertco.com
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone:303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:001–800–4422–3781
Email: ONlit–asia@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031Phone: 81–3–5740–2700Email: r14525@onsemi.comON Semiconductor Website: http://onsemi.comFor additional information, please contact your localSales Representative.http://onsemi.com4VN2222LL/D
