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专利名称：Method for assessing the quality of a
memory unit
发明人：Gerd Frankowsky申请号：US10185282申请日：20020627
公开号：US20030002362A1公开日：20030102
专利附图：
摘要：Assessing the burn-in of faulty memory units on a wafer includes detecting onlythose defective memory cells that lie along control lines in the case of which the totalnumber of defective memory cells does not exceed a predetermined limit value. With
such a quality criterion, it is also possible to monitor the burn-in of faulty memory unitson a wafer.
申请人：FRANKOWSKY GERD
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