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专利名称：Method of fabricating power MOSFET发明人：Chu-Kuang Liu申请号：US15210881申请日：20160714公开号：US09653560B1公开日：20170516
专利附图：
摘要：A method of fabricating a power metal oxide semiconductor field effecttransistor (MOSFET) is provided, and the method includes forming a semiconductor layeron a substrate, forming at least one first trench in the semiconductor layer, forming athermal oxide layer on a surface of the trench, forming a first gate in the first trench,
forming a chemical vapor deposition (CVD) oxide layer on the first gate in the first trench,forming a mask layer on the CVD oxide layer in the first trench so as to form a secondtrench between the mask layer and the thermal oxide layer, and forming a second gate inthe second trench.
申请人：Excelliance MOS Corporation
地址：Hsinchu County TW
国籍：TW
代理机构：Jianq Chyun IP Office
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