专利内容由知识产权出版社提供
专利名称：MOSFET and fabrication method thereof发明人：Young-Kum Back,Yeon-Woo Cheong申请号：US09871711申请日：20010604
公开号：US20020001933A1公开日：20020103
专利附图：
摘要：A MOSFET is fabricated by forming a trench in a semiconductor substrate,forming an insulating film in the trench, forming a gate electrode to fill in the trench,forming a gate oxide on the gate electrode, the insulating film and an adjacent portion ofthe semiconductor substrate, forming a first silicon film on the semiconductor substrate
and on a portion of the gate oxide, and forming a second silicon film on a portion of thegate oxide on which the first silicon film is not formed. Since the thusly fabricatedMOSFET has a controlled channel length, modeling of the device can be easily achievedand its mass-producibility is improved.
申请人：HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.
更多信息请下载全文后查看
