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专利名称：MOSFET and fabrication method发明人：Richard N. Campbell,Michael K.
Thompson,Robert P. Haase
申请号：US07/396844申请日：190821公开号：US05087582A公开日：19920211
摘要：A method of fabricating a MOSFET wherein sidewall spacers are providedadjacent the gate of the MOSFET, the method including the steps of providing aninsulating layer which extends over the source, drain and gate of the MOSFET and whichacts as an impurity diffusion barrier; and forming on the insulating layer sidewall spacerswhich are composed of an insulating material.
申请人：INMOS LIMITED
代理人：Edward D. Manzo
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