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RECTANGULAR SUBSTRATE FOR IMPRINT LITHOGRAPHY AND

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专利名称:RECTANGULAR SUBSTRATE FOR IMPRINT

LITHOGRAPHY AND MAKING METHOD

发明人:Daiyu Okafuji,Hiroyuki Yamazaki,Masao

Ando,Masaki Takeuchi

申请号:US15715442申请日:20170926

公开号:US20180079130A1公开日:20180322

专利附图:

摘要:A rectangular substrate is prepared by providing a starting rectangular

substrate having front and back surfaces and four side surfaces as ground, and pressing a

rotary polishing pad perpendicularly against one side surface under a constant pressure,and relatively moving the rotary polishing pad and the substrate parallel to the sidesurface, for thereby polishing the side surface of the substrate. In the imprint

lithography, the rectangular substrate is capable of controlling compression and patternshape at a high accuracy and thus transferring a complex pattern of fine feature size to arecipient.

申请人:Shin-Etsu Chemical Co., Ltd.

地址:Tokyo JP

国籍:JP

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