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专利名称：Semiconductor device for switching发明人：Kenichi Yoshimochi申请号：US10813236申请日：20040331公开号：US07091555B2公开日：20060815
专利附图：
摘要：A semiconductor device provided with: a channel region of a first conductivityprovided in a surface of a semiconductor substrate; a source region of a second
conductivity different from the first conductivity, the source region being provided on anedge of a trench which extends through the channel region; a gate oxide film provided on
an interior wall of the trench; and a gate electrode provided in the trench in opposedrelation to the channel region with the intervention of the gate oxide film. The interiorwall of the trench includes a first interior side surface having a (100) plane orientation,and a second interior side surface having a plane orientation different from the planeorientation of the first interior side surface, and the source region is disposed away froma portion of the gate oxide film provided on the second interior side surface.
申请人：Kenichi Yoshimochi
地址：Kyoto JP
国籍：JP
代理机构：Rabin & Berdo, PC
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